First-level areas：Information Technology
First-level areas：Chips, Electronic Components and Equipment
Source：Social Recruitment
Job description ：
Job description.
1. Responsible for MOCVD/MBE epitaxial growth of GaAs based and InP based semiconductor lasers and other devices. By optimizing the process and device structure of MOCVD/MBE, semiconductor lasers and other devices with competitive performance and cost have been developed.
2. Establish an external production quality control system around the research and development of products. To solve the problems of extension and production, continuously improve the yield of epitaxial production and the utilization rate of equipment.
3. Responsible for the analysis of epitaxial materials, including XRD, PL，ECV，Hall，TEM，SIMS， wait.
4. Train and guide technical workers and engineers to carry out external production and research and development work.
5. Responsible for the application and management of company R&D projects, including designing experiments, analyzing data, controlling project progress, summarizing and reporting results, and writing articles, patents, and project completion reports as needed.
Job requirements.
1. Doctoral degree (Materials Science, Physics, Chemical Engineering, and Electronics), with direct experience subject to relaxed educational requirements.
More than 2.3 years of experience in MOCVD/MBE epitaxial growth, with priority given to semiconductor material systems such as GaAs based and InP based. Higher education holders may have their work experience extended.
3. Proficient in several material analysis techniques in XRD, PL, ECV, Hall, TEM, SIMS testing.
4. Proficient in using MS office (Word, PowerPoint, Excel), familiar with DOE analysis, and possess high engineering communication skills.

Please send your CV or resume as an attachment to the following email address:
mailto: rbhr@hrcenter.co.uk
With the subject line formatted as: ‘Name + Position + Company Name + Location’.